P-Channel MOSFET Transistor, 5.7 A, 30 V, 8-Pin SOIC Vishay SI4431BDY-T1-E3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
5.7 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.5 W
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
13 nC @ 5 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
5mm
Plotis
4mm
Minimali darbinė temperatūra
-55 °C
Aukštis
1.55mm
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P.O.A.
10
P.O.A.
10
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Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
5.7 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.5 W
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
13 nC @ 5 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
5mm
Plotis
4mm
Minimali darbinė temperatūra
-55 °C
Aukštis
1.55mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products