N-Channel MOSFET Transistor, 20 A, 600 V, 3-Pin TO-220 Infineon SPP20N60S5

RS kodas: 354-6391PGamintojas: InfineonGamintojo kodas: SPP20N60S5
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

208 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

79 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

8.64mm

Plotis

10.26mm

Minimali darbinė temperatūra

-55 °C

Aukštis

4.4mm

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Patikrinkite dar kartą.

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€ 3,42

Už kiekviena vnt. (tiekiama tuboje) (be PVM)

€ 4,14

Už kiekviena vnt. (tiekiama tuboje) (su PVM)

N-Channel MOSFET Transistor, 20 A, 600 V, 3-Pin TO-220 Infineon SPP20N60S5
Pasirinkite pakuotės tipą
sticker-462

€ 3,42

Už kiekviena vnt. (tiekiama tuboje) (be PVM)

€ 4,14

Už kiekviena vnt. (tiekiama tuboje) (su PVM)

N-Channel MOSFET Transistor, 20 A, 600 V, 3-Pin TO-220 Infineon SPP20N60S5
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kaina
1 - 4€ 3,42
5 - 19€ 3,28
20 - 49€ 3,14
50 - 99€ 2,85
100+€ 2,80

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

208 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

79 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

8.64mm

Plotis

10.26mm

Minimali darbinė temperatūra

-55 °C

Aukštis

4.4mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina