Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
650 V
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
151 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.36mm
Typical Gate Charge @ Vgs
37 nC @ 10 V
Aukštis
15.95mm
Serija
CoolMOS P6
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
0.9V
Produkto aprašymas
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 4,322
Each (In a Pack of 5) (be PVM)
€ 5,23
Each (In a Pack of 5) (su PVM)
Standartas
5
€ 4,322
Each (In a Pack of 5) (be PVM)
€ 5,23
Each (In a Pack of 5) (su PVM)
Standartas
5
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
5 - 20 | € 4,322 | € 21,61 |
25 - 45 | € 4,085 | € 20,42 |
50 - 120 | € 3,705 | € 18,52 |
125 - 245 | € 3,325 | € 16,62 |
250+ | € 3,135 | € 15,68 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
650 V
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
151 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.36mm
Typical Gate Charge @ Vgs
37 nC @ 10 V
Aukštis
15.95mm
Serija
CoolMOS P6
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
0.9V
Produkto aprašymas
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.