N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB Vishay SIHP8N50D-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
8.7 A
Maximum Drain Source Voltage
500 V
Serija
D Series
Pakuotės tipas
TO-220AB
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
4.65mm
Number of Elements per Chip
1
Transistor Material
Si
Ilgis
10.51mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
9.01mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 54,62
€ 1,092 Each (In a Tube of 50) (be PVM)
€ 66,09
€ 1,321 Each (In a Tube of 50) (su PVM)
50
€ 54,62
€ 1,092 Each (In a Tube of 50) (be PVM)
€ 66,09
€ 1,321 Each (In a Tube of 50) (su PVM)
50
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 50 - 50 | € 1,092 | € 54,62 |
| 100 - 200 | € 0,928 | € 46,41 |
| 250+ | € 0,819 | € 40,94 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
8.7 A
Maximum Drain Source Voltage
500 V
Serija
D Series
Pakuotės tipas
TO-220AB
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
4.65mm
Number of Elements per Chip
1
Transistor Material
Si
Ilgis
10.51mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
9.01mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products