N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB Vishay SIHP8N50D-GE3

RS kodas: 787-9181PGamintojas: VishayGamintojo kodas: SIHP8N50D-GE3
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

8.7 A

Maximum Drain Source Voltage

500 V

Serija

D Series

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.51mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Plotis

4.65mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

9.01mm

Produkto aprašymas

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 0,538

Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 0,651

Už kiekviena vnt. (tiekiama riteje) (su PVM)

N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB Vishay SIHP8N50D-GE3
Pasirinkite pakuotės tipą
sticker-462

€ 0,538

Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 0,651

Už kiekviena vnt. (tiekiama riteje) (su PVM)

N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB Vishay SIHP8N50D-GE3
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

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kiekisVieneto kainaPer Ritė
5 - 20€ 0,538€ 2,69
25+€ 0,52€ 2,60

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

8.7 A

Maximum Drain Source Voltage

500 V

Serija

D Series

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.51mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Plotis

4.65mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

9.01mm

Produkto aprašymas

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more