Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8.7 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
10.51mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.65mm
Transistor Material
Si
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 11.38
€ 0.455 Each (Supplied on a Reel) (Exc. Vat)
€ 13.77
€ 0.551 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
25

€ 11.38
€ 0.455 Each (Supplied on a Reel) (Exc. Vat)
€ 13.77
€ 0.551 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
25

Stock information temporarily unavailable.
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8.7 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
10.51mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.65mm
Transistor Material
Si
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details


