N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 Toshiba TK30E06N1,S1X(S
Techniniai dokumentai
Specifikacijos
Markė
ToshibaChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
53 W
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.45mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
10.16mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Aukštis
15.1mm
Serija
U-MOSVIII-H
Forward Diode Voltage
1.2V
Produkto aprašymas
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,503
Each (In a Pack of 10) (be PVM)
€ 0,609
Each (In a Pack of 10) (su PVM)
10
€ 0,503
Each (In a Pack of 10) (be PVM)
€ 0,609
Each (In a Pack of 10) (su PVM)
10
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 10 - 40 | € 0,503 | € 5,03 |
| 50 - 90 | € 0,30 | € 3,00 |
| 100 - 240 | € 0,274 | € 2,74 |
| 250 - 490 | € 0,269 | € 2,69 |
| 500+ | € 0,264 | € 2,64 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
ToshibaChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
53 W
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.45mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
10.16mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Aukštis
15.1mm
Serija
U-MOSVIII-H
Forward Diode Voltage
1.2V
Produkto aprašymas
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products