Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET F7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
160W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
13.6nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Product Details
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
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Stock information temporarily unavailable.
€ 11.50
€ 2.30 Each (Supplied in a Tube) (Exc. Vat)
€ 13.92
€ 2.783 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
5
€ 11.50
€ 2.30 Each (Supplied in a Tube) (Exc. Vat)
€ 13.92
€ 2.783 Each (Supplied in a Tube) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
5
| Quantity | Unit price | Per Tube |
|---|---|---|
| 5 - 45 | € 2.30 | € 11.50 |
| 50 - 245 | € 1.85 | € 9.25 |
| 250 - 495 | € 1.40 | € 7.00 |
| 500+ | € 1.25 | € 6.25 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET F7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
160W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
13.6nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Product Details
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
