Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
5A
Maximum Collector Emitter Voltage Vceo
1200V
Maximum Power Dissipation Pd
75W
Package Type
TO-252
Mount Type
Surface
Channel Type
N
Pin Count
3
Switching Speed
690ns
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
6.2mm
Standards/Approvals
JEDEC JESD97, ECOPACK
Width
6.4mm
Series
H
Height
2.2mm
Automotive Standard
No
Energy Rating
12.68mJ
Country of Origin
China
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
€ 63.75
€ 2.25 Each (Supplied on a Reel) (Exc. Vat)
€ 77.14
€ 2.722 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
25
€ 63.75
€ 2.25 Each (Supplied on a Reel) (Exc. Vat)
€ 77.14
€ 2.722 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
25
| Quantity | Unit price | Per Reel |
|---|---|---|
| 50 - 245 | € 2.25 | € 11.25 |
| 250 - 495 | € 2.00 | € 10.00 |
| 500+ | € 1.70 | € 8.50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
5A
Maximum Collector Emitter Voltage Vceo
1200V
Maximum Power Dissipation Pd
75W
Package Type
TO-252
Mount Type
Surface
Channel Type
N
Pin Count
3
Switching Speed
690ns
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
6.2mm
Standards/Approvals
JEDEC JESD97, ECOPACK
Width
6.4mm
Series
H
Height
2.2mm
Automotive Standard
No
Energy Rating
12.68mJ
Country of Origin
China
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
