STMicroelectronics SiC MOSFET Type N-Channel MOSFET, 20 A, 1200 V Enhancement, 3-Pin H2PAK-2

RS Stock No.: 201-4415Brand: STMicroelectronicsManufacturers Part No.: SCT20N120H
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

1200V

Package Type

H2PAK-2

Series

SiC MOSFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

203mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

45nC

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

4.7 mm

Length

15.8mm

Height

10.4mm

Standards/Approvals

No

Automotive Standard

No

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Stock information temporarily unavailable.

€ 11,800.00

€ 11.80 Each (On a Reel of 1000) (Exc. Vat)

€ 14,278.00

€ 14.278 Each (On a Reel of 1000) (inc. VAT)

STMicroelectronics SiC MOSFET Type N-Channel MOSFET, 20 A, 1200 V Enhancement, 3-Pin H2PAK-2

1000

Available in multiples of 1000
1000€ 11,800.00
2000€ 23,600.00
3000€ 35,400.00
4000€ 47,200.00
5000€ 59,000.00
6000€ 70,800.00
7000€ 82,600.00
8000€ 94,400.00
9000€ 106,200.00
10000€ 118,000.00
11000€ 129,800.00
12000€ 141,600.00
13000€ 153,400.00
14000€ 165,200.00
15000€ 177,000.00

sticker-462

€ 11,800.00

€ 11.80 Each (On a Reel of 1000) (Exc. Vat)

€ 14,278.00

€ 14.278 Each (On a Reel of 1000) (inc. VAT)

STMicroelectronics SiC MOSFET Type N-Channel MOSFET, 20 A, 1200 V Enhancement, 3-Pin H2PAK-2

Stock information temporarily unavailable.

1000

Available in multiples of 1000
1000€ 11,800.00
2000€ 23,600.00
3000€ 35,400.00
4000€ 47,200.00
5000€ 59,000.00
6000€ 70,800.00
7000€ 82,600.00
8000€ 94,400.00
9000€ 106,200.00
10000€ 118,000.00
11000€ 129,800.00
12000€ 141,600.00
13000€ 153,400.00
14000€ 165,200.00
15000€ 177,000.00

sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

1200V

Package Type

H2PAK-2

Series

SiC MOSFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

203mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

45nC

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

4.7 mm

Length

15.8mm

Height

10.4mm

Standards/Approvals

No

Automotive Standard

No

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more