IXYS IXGT30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-268, Surface Mount
Techniniai dokumentai
Specifikacijos
Markė
IXYSMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Pakuotės tipas
TO-268
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Transistor Configuration
Single
Ilgis
16.05mm
Plotis
14mm
Aukštis
5.1mm
Matmenys
16.05 x 14 x 5.1mm
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 5,60
€ 5,60 už 1 vnt. (be PVM)
€ 6,78
€ 6,78 už 1 vnt. (su PVM)
1
€ 5,60
€ 5,60 už 1 vnt. (be PVM)
€ 6,78
€ 6,78 už 1 vnt. (su PVM)
1
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
IXYSMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Pakuotės tipas
TO-268
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Transistor Configuration
Single
Ilgis
16.05mm
Plotis
14mm
Aukštis
5.1mm
Matmenys
16.05 x 14 x 5.1mm
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products