Technical Document
Specifications
Brand
IXYSMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
€ 14.50
€ 14.50 Each (Exc. Vat)
€ 17.54
€ 17.54 Each (inc. VAT)
1

€ 14.50
€ 14.50 Each (Exc. Vat)
€ 17.54
€ 17.54 Each (inc. VAT)
Stock information temporarily unavailable.
1

Stock information temporarily unavailable.
| Quantity | Unit price | 
|---|---|
| 1 - 9 | € 14.50 | 
| 10+ | € 12.70 | 
Technical Document
Specifications
Brand
IXYSMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.


