Vishay P-Channel MOSFET, 3.5 A, 200 V, 3-Pin TO-220AB IRF9620PBF

RS kodas: 541-1045Gamintojas: VishayGamintojo kodas: IRF9620PBF
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

200 V

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

22 nC @ 10 V

Plotis

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10.41mm

Maksimali darbinė temperatūra

+150 °C

Aukštis

9.01mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 1,28

€ 1,28 už 1 vnt. (be PVM)

€ 1,55

€ 1,55 už 1 vnt. (su PVM)

Vishay P-Channel MOSFET, 3.5 A, 200 V, 3-Pin TO-220AB IRF9620PBF
Pasirinkite pakuotės tipą
sticker-462

€ 1,28

€ 1,28 už 1 vnt. (be PVM)

€ 1,55

€ 1,55 už 1 vnt. (su PVM)

Vishay P-Channel MOSFET, 3.5 A, 200 V, 3-Pin TO-220AB IRF9620PBF
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kaina
1 - 9€ 1,28
10 - 49€ 1,04
50 - 99€ 1,00
100 - 249€ 0,95
250+€ 0,89

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

200 V

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

22 nC @ 10 V

Plotis

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10.41mm

Maksimali darbinė temperatūra

+150 °C

Aukštis

9.01mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina