Techniniai dokumentai
Specifikacijos
Markė
MagnatecChannel Type
P
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
200 V
Pakuotės tipas
TO-220AB
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Power Dissipation
40 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.67mm
Plotis
4.83mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Minimali darbinė temperatūra
-55 °C
Aukštis
9.02mm
Produkto aprašymas
MOSFETs - P-Channel
The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.
P.O.A.
1

P.O.A.
1

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Techniniai dokumentai
Specifikacijos
Markė
MagnatecChannel Type
P
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
200 V
Pakuotės tipas
TO-220AB
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Power Dissipation
40 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.67mm
Plotis
4.83mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Minimali darbinė temperatūra
-55 °C
Aukštis
9.02mm
Produkto aprašymas
MOSFETs - P-Channel
The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.