Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
40 V
Package Type
PowerSO
Mounting Type
Surface Mount
Pin Count
10
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
73 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
9.6mm
Maximum Operating Temperature
+165 °C
Height
3.6mm
Typical Power Gain
14 dB
Product details
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
€ 98.80
€ 19.76 Each (Supplied in a Tube) (Exc. Vat)
€ 119.55
€ 23.91 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
5

€ 98.80
€ 19.76 Each (Supplied in a Tube) (Exc. Vat)
€ 119.55
€ 23.91 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
5

Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price |
---|---|
5 - 9 | € 19.76 |
10 - 24 | € 18.72 |
25 - 49 | € 17.67 |
50+ | € 17.20 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
40 V
Package Type
PowerSO
Mounting Type
Surface Mount
Pin Count
10
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
73 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
9.6mm
Maximum Operating Temperature
+165 °C
Height
3.6mm
Typical Power Gain
14 dB
Product details
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.