Vishay N-Channel MOSFET, 6.2 A, 60 V, 8-Pin PowerPAK SO-8 SI7850DP-T1-E3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
6.2 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
PowerPAK SO-8
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
5.89mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
4.9mm
Maksimali darbinė temperatūra
+150 °C
Typical Gate Charge @ Vgs
18 nC @ 10 V
Aukštis
1.04mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 9,25
€ 1,85 Each (In a Pack of 5) (be PVM)
€ 11,19
€ 2,238 Each (In a Pack of 5) (su PVM)
Standartas
5
€ 9,25
€ 1,85 Each (In a Pack of 5) (be PVM)
€ 11,19
€ 2,238 Each (In a Pack of 5) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
5
Sandėlio informacija laikinai nepasiekiama.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 45 | € 1,85 | € 9,25 |
| 50 - 120 | € 1,60 | € 8,00 |
| 125 - 245 | € 1,40 | € 7,00 |
| 250 - 495 | € 1,15 | € 5,75 |
| 500+ | € 0,896 | € 4,48 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
6.2 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
PowerPAK SO-8
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
5.89mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
4.9mm
Maksimali darbinė temperatūra
+150 °C
Typical Gate Charge @ Vgs
18 nC @ 10 V
Aukštis
1.04mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products