P-Channel MOSFET, 18.3 A, 30 V, 8-Pin SO-8 Vishay Si4425FDY-T1-GE3

RS kodas: 200-6797Gamintojas: VishayGamintojo kodas: Si4425FDY-T1-GE3
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

18.3 A

Maximum Drain Source Voltage

30 V

Serija

TrenchFET® Gen IV

Pakuotės tipas

SO-8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

0.016 Ω, 0.0095 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

1

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€ 0,236

Each (In a Pack of 50) (be PVM)

€ 0,285

Each (In a Pack of 50) (su PVM)

P-Channel MOSFET, 18.3 A, 30 V, 8-Pin SO-8 Vishay Si4425FDY-T1-GE3
sticker-462

€ 0,236

Each (In a Pack of 50) (be PVM)

€ 0,285

Each (In a Pack of 50) (su PVM)

P-Channel MOSFET, 18.3 A, 30 V, 8-Pin SO-8 Vishay Si4425FDY-T1-GE3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

18.3 A

Maximum Drain Source Voltage

30 V

Serija

TrenchFET® Gen IV

Pakuotės tipas

SO-8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

0.016 Ω, 0.0095 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more