Vishay N-Channel MOSFET, 5.2 A, 200 V, 3-Pin TO-220AB IRF620PBF

RS kodas: 543-0052Gamintojas: VishayGamintojo kodas: IRF620PBFDistrelec Article No.: 17115009
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.2 A

Maximum Drain Source Voltage

200 V

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

14 nC @ 10 V

Plotis

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10.41mm

Maksimali darbinė temperatūra

+150 °C

Aukštis

9.01mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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N-channel MOSFET,IRF620 5.2A 200V
P.O.A.už 1 vnt. (be PVM)
N-channel MOSFET,IRF620 6A 200V
P.O.A.Each (In a Pack of 5) (be PVM)

€ 0,89

€ 0,89 už 1 vnt. (be PVM)

€ 1,08

€ 1,08 už 1 vnt. (su PVM)

Vishay N-Channel MOSFET, 5.2 A, 200 V, 3-Pin TO-220AB IRF620PBF
Pasirinkite pakuotės tipą
sticker-462

€ 0,89

€ 0,89 už 1 vnt. (be PVM)

€ 1,08

€ 1,08 už 1 vnt. (su PVM)

Vishay N-Channel MOSFET, 5.2 A, 200 V, 3-Pin TO-220AB IRF620PBF

Sandėlio informacija laikinai nepasiekiama.

Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

kiekisVieneto kaina
1 - 9€ 0,89
10 - 49€ 0,81
50 - 99€ 0,78
100 - 249€ 0,68
250+€ 0,63

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
N-channel MOSFET,IRF620 5.2A 200V
P.O.A.už 1 vnt. (be PVM)
N-channel MOSFET,IRF620 6A 200V
P.O.A.Each (In a Pack of 5) (be PVM)

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.2 A

Maximum Drain Source Voltage

200 V

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

14 nC @ 10 V

Plotis

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10.41mm

Maksimali darbinė temperatūra

+150 °C

Aukštis

9.01mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
N-channel MOSFET,IRF620 5.2A 200V
P.O.A.už 1 vnt. (be PVM)
N-channel MOSFET,IRF620 6A 200V
P.O.A.Each (In a Pack of 5) (be PVM)