Vishay Siliconix TrenchFET N-Channel MOSFET, 75 A, 40 V, 4-Pin PowerPAK SO-8L SQJA76EP-T1_GE3
Techniniai dokumentai
Specifikacijos
Markė
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
40 V
Serija
TrenchFET
Pakuotės tipas
PowerPAK SO-8L
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
4
Maximum Drain Source Resistance
5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
66 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Ilgis
5.99mm
Typical Gate Charge @ Vgs
66 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Plotis
5mm
Transistor Material
Si
Automotive Standard
AEC-Q101
Aukštis
1.07mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Kilmės šalis
China
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€ 10,50
€ 1,05 Each (In a Pack of 10) (be PVM)
€ 12,70
€ 1,27 Each (In a Pack of 10) (su PVM)
Standartas
10
€ 10,50
€ 1,05 Each (In a Pack of 10) (be PVM)
€ 12,70
€ 1,27 Each (In a Pack of 10) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
10
Sandėlio informacija laikinai nepasiekiama.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 10 - 90 | € 1,05 | € 10,50 |
| 100 - 490 | € 0,794 | € 7,94 |
| 500 - 990 | € 0,674 | € 6,74 |
| 1000+ | € 0,581 | € 5,81 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
40 V
Serija
TrenchFET
Pakuotės tipas
PowerPAK SO-8L
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
4
Maximum Drain Source Resistance
5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
66 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Ilgis
5.99mm
Typical Gate Charge @ Vgs
66 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Plotis
5mm
Transistor Material
Si
Automotive Standard
AEC-Q101
Aukštis
1.07mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Kilmės šalis
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products