N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70-6L Vishay Siliconix SiA106DJ-T1-GE3
Techniniai dokumentai
Specifikacijos
Markė
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Serija
TrenchFET
Pakuotės tipas
SC-70-6L
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Plotis
1.35mm
Number of Elements per Chip
1
Transistor Material
Si
Ilgis
2.2mm
Typical Gate Charge @ Vgs
8.9 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
1mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Kilmės šalis
China
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€ 6,98
€ 0,698 Each (In a Pack of 10) (be PVM)
€ 8,45
€ 0,845 Each (In a Pack of 10) (su PVM)
Standartas
10
€ 6,98
€ 0,698 Each (In a Pack of 10) (be PVM)
€ 8,45
€ 0,845 Each (In a Pack of 10) (su PVM)
Standartas
10
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 10 - 40 | € 0,698 | € 6,98 |
| 50 - 90 | € 0,629 | € 6,29 |
| 100 - 490 | € 0,593 | € 5,93 |
| 500 - 990 | € 0,557 | € 5,57 |
| 1000+ | € 0,488 | € 4,88 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Serija
TrenchFET
Pakuotės tipas
SC-70-6L
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Plotis
1.35mm
Number of Elements per Chip
1
Transistor Material
Si
Ilgis
2.2mm
Typical Gate Charge @ Vgs
8.9 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
1mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Kilmės šalis
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products