N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 Toshiba TK20N60W5,S1VF(S

RS kodas: 125-0551Gamintojas: ToshibaGamintojo kodas: TK20N60W5,S1VF(S
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Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Serija

DTMOSIV

Pakuotės tipas

TO-247

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

175 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

165 W

Maximum Gate Source Voltage

-30 V, +30 V

Plotis

5.02mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

15.94mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Aukštis

20.95mm

Forward Diode Voltage

1.7V

Kilmės šalis

Japan

Produkto aprašymas

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

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€ 15,20

€ 3,04 Each (In a Pack of 5) (be PVM)

€ 18,39

€ 3,678 Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 Toshiba TK20N60W5,S1VF(S
sticker-462

€ 15,20

€ 3,04 Each (In a Pack of 5) (be PVM)

€ 18,39

€ 3,678 Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 Toshiba TK20N60W5,S1VF(S
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
5 - 20€ 3,04€ 15,20
25 - 45€ 2,755€ 13,78
50+€ 2,518€ 12,59

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Serija

DTMOSIV

Pakuotės tipas

TO-247

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

175 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

165 W

Maximum Gate Source Voltage

-30 V, +30 V

Plotis

5.02mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

15.94mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Aukštis

20.95mm

Forward Diode Voltage

1.7V

Kilmės šalis

Japan

Produkto aprašymas

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more