N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 Toshiba TK16E60W5,S1VX(S

RS kodas: 125-0541Gamintojas: ToshibaGamintojo kodas: TK16E60W5,S1VX(S
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15.8 A

Maximum Drain Source Voltage

600 V

Serija

DTMOSIV

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

230 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

130 W

Maximum Gate Source Voltage

-30 V, +30 V

Plotis

4.45mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

10.16mm

Typical Gate Charge @ Vgs

43 nC @ 10 V

Aukštis

15.1mm

Forward Diode Voltage

1.7V

Kilmės šalis

Japan

Produkto aprašymas

MOSFET Transistors, Toshiba

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Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 1,33

Each (In a Pack of 5) (be PVM)

€ 1,609

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 Toshiba TK16E60W5,S1VX(S

5

Galima įsigyti kartotiną kiekį 5
5€ 6,65
10€ 13,30
15€ 19,95
20€ 26,60
25€ 20,02
30€ 24,03
35€ 28,03
40€ 32,03
45€ 36,04
50€ 36,67
55€ 40,34
60€ 44,00
65€ 47,67
70€ 51,34
75€ 55,00
sticker-462

€ 1,33

Each (In a Pack of 5) (be PVM)

€ 1,609

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 Toshiba TK16E60W5,S1VX(S
Sandėlio informacija laikinai nepasiekiama.

5

Galima įsigyti kartotiną kiekį 5
5€ 6,65
10€ 13,30
15€ 19,95
20€ 26,60
25€ 20,02
30€ 24,03
35€ 28,03
40€ 32,03
45€ 36,04
50€ 36,67
55€ 40,34
60€ 44,00
65€ 47,67
70€ 51,34
75€ 55,00
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
5 - 20€ 1,33€ 6,65
25 - 45€ 0,801€ 4,00
50+€ 0,733€ 3,67

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15.8 A

Maximum Drain Source Voltage

600 V

Serija

DTMOSIV

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

230 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

130 W

Maximum Gate Source Voltage

-30 V, +30 V

Plotis

4.45mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

10.16mm

Typical Gate Charge @ Vgs

43 nC @ 10 V

Aukštis

15.1mm

Forward Diode Voltage

1.7V

Kilmės šalis

Japan

Produkto aprašymas

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more