Texas Instruments N-Channel MOSFET, 204 A, 40 V, 8-Pin VSON-CLIP CSD18502Q5B
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
204 A
Maximum Drain Source Voltage
40 V
Serija
NexFET
Pakuotės tipas
VSON-CLIP
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
5.1mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
6.1mm
Typical Gate Charge @ Vgs
25 nC @ 4.5 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
1.05mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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€ 12,59
€ 2,518 Each (In a Pack of 5) (be PVM)
€ 15,23
€ 3,047 Each (In a Pack of 5) (su PVM)
Standartas
5
€ 12,59
€ 2,518 Each (In a Pack of 5) (be PVM)
€ 15,23
€ 3,047 Each (In a Pack of 5) (su PVM)
Standartas
5
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 20 | € 2,518 | € 12,59 |
| 25 - 45 | € 2,375 | € 11,88 |
| 50 - 120 | € 2,138 | € 10,69 |
| 125 - 245 | € 1,90 | € 9,50 |
| 250+ | € 1,805 | € 9,02 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
204 A
Maximum Drain Source Voltage
40 V
Serija
NexFET
Pakuotės tipas
VSON-CLIP
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
5.1mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
6.1mm
Typical Gate Charge @ Vgs
25 nC @ 4.5 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
1.05mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products