N-Channel MOSFET, 100 A, 30 V, 8-Pin SON Texas Instruments CSD17303Q5
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SON
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.1mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V
Plotis
5.1mm
Transistor Material
Si
Serija
NexFET
Minimali darbinė temperatūra
-55 °C
Aukštis
1.05mm
Produkto aprašymas
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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€ 2,09
Each (In a Pack of 5) (be PVM)
€ 2,529
Each (In a Pack of 5) (su PVM)
Standartas
5
€ 2,09
Each (In a Pack of 5) (be PVM)
€ 2,529
Each (In a Pack of 5) (su PVM)
Standartas
5
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 45 | € 2,09 | € 10,45 |
| 50 - 95 | € 1,662 | € 8,31 |
| 100+ | € 1,33 | € 6,65 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SON
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.1mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V
Plotis
5.1mm
Transistor Material
Si
Serija
NexFET
Minimali darbinė temperatūra
-55 °C
Aukštis
1.05mm
Produkto aprašymas
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products