N-Channel MOSFET, 100 A, 25 V, 8-Pin SON Texas Instruments CSD16413Q5A

RS kodas: 827-4798Gamintojas: Texas InstrumentsGamintojo kodas: CSD16413Q5A
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Pakuotės tipas

SON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

5.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.9V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +16 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

5.8mm

Typical Gate Charge @ Vgs

9 nC @ 4.5 V

Plotis

5mm

Number of Elements per Chip

1

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

1.1mm

Serija

NexFET

Produkto aprašymas

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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€ 0,519

Each (In a Pack of 5) (be PVM)

€ 0,628

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 100 A, 25 V, 8-Pin SON Texas Instruments CSD16413Q5A
Pasirinkite pakuotės tipą
sticker-462

€ 0,519

Each (In a Pack of 5) (be PVM)

€ 0,628

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 100 A, 25 V, 8-Pin SON Texas Instruments CSD16413Q5A
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Pakuotės tipas

SON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

5.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.9V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +16 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

5.8mm

Typical Gate Charge @ Vgs

9 nC @ 4.5 V

Plotis

5mm

Number of Elements per Chip

1

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

1.1mm

Serija

NexFET

Produkto aprašymas

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more