P-Channel MOSFET, 10 A, 40 V, 8-Pin SOIC STMicroelectronics STS10P4LLF6

RS kodas: 165-5564Gamintojas: STMicroelectronicsGamintojo kodas: STS10P4LLF6
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Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

40 V

Serija

STripFET

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

4mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

5mm

Typical Gate Charge @ Vgs

34 nC @ 4.5 V

Aukštis

1.5mm

Forward Diode Voltage

1.1V

Kilmės šalis

China

Produkto aprašymas

P-Channel STripFET™ Power MOSFET, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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€ 2 256,25

€ 0,902 Each (On a Reel of 2500) (be PVM)

€ 2 730,06

€ 1,092 Each (On a Reel of 2500) (su PVM)

P-Channel MOSFET, 10 A, 40 V, 8-Pin SOIC STMicroelectronics STS10P4LLF6
sticker-462

€ 2 256,25

€ 0,902 Each (On a Reel of 2500) (be PVM)

€ 2 730,06

€ 1,092 Each (On a Reel of 2500) (su PVM)

P-Channel MOSFET, 10 A, 40 V, 8-Pin SOIC STMicroelectronics STS10P4LLF6
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

40 V

Serija

STripFET

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

4mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

5mm

Typical Gate Charge @ Vgs

34 nC @ 4.5 V

Aukštis

1.5mm

Forward Diode Voltage

1.1V

Kilmės šalis

China

Produkto aprašymas

P-Channel STripFET™ Power MOSFET, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more