N-Channel MOSFET, 50 A, 60 V, 3-Pin TO-220 STMicroelectronics STP55NF06

RS kodas: 485-7715Gamintojas: STMicroelectronicsGamintojo kodas: STP55NF06
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Serija

STripFET II

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

44.5 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.4mm

Plotis

4.6mm

Minimali darbinė temperatūra

-55 °C

Aukštis

9.15mm

Produkto aprašymas

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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€ 1,33

Each (In a Pack of 5) (be PVM)

€ 1,609

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 50 A, 60 V, 3-Pin TO-220 STMicroelectronics STP55NF06
Pasirinkite pakuotės tipą
sticker-462

€ 1,33

Each (In a Pack of 5) (be PVM)

€ 1,609

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 50 A, 60 V, 3-Pin TO-220 STMicroelectronics STP55NF06
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Serija

STripFET II

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

44.5 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.4mm

Plotis

4.6mm

Minimali darbinė temperatūra

-55 °C

Aukštis

9.15mm

Produkto aprašymas

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more