Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
42 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
PowerFLAT 5 x 6
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
5.4mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Ilgis
6.35mm
Typical Gate Charge @ Vgs
30 nC @ 4.5 V
Aukštis
0.95mm
Serija
STripFET
Forward Diode Voltage
1.1V
Produkto aprašymas
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 1,033
Each (On a Reel of 3000) (be PVM)
€ 1,25
Each (On a Reel of 3000) (su PVM)
3000
€ 1,033
Each (On a Reel of 3000) (be PVM)
€ 1,25
Each (On a Reel of 3000) (su PVM)
3000
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
42 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
PowerFLAT 5 x 6
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
5.4mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Ilgis
6.35mm
Typical Gate Charge @ Vgs
30 nC @ 4.5 V
Aukštis
0.95mm
Serija
STripFET
Forward Diode Voltage
1.1V
Produkto aprašymas
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.