N-Channel MOSFET, 80 A, 25 V, 3-Pin DPAK STMicroelectronics STD95N2LH5

RS kodas: 165-6678Gamintojas: STMicroelectronicsGamintojo kodas: STD95N2LH5
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

25 V

Serija

STripFET V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Plotis

6.2mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Ilgis

6.6mm

Typical Gate Charge @ Vgs

13.4 nC @ 5 V

Aukštis

2.4mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel STripFET™ V, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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€ 1 688,62

€ 0,675 Each (On a Reel of 2500) (be PVM)

€ 2 043,23

€ 0,817 Each (On a Reel of 2500) (su PVM)

N-Channel MOSFET, 80 A, 25 V, 3-Pin DPAK STMicroelectronics STD95N2LH5
sticker-462

€ 1 688,62

€ 0,675 Each (On a Reel of 2500) (be PVM)

€ 2 043,23

€ 0,817 Each (On a Reel of 2500) (su PVM)

N-Channel MOSFET, 80 A, 25 V, 3-Pin DPAK STMicroelectronics STD95N2LH5
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

25 V

Serija

STripFET V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Plotis

6.2mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Ilgis

6.6mm

Typical Gate Charge @ Vgs

13.4 nC @ 5 V

Aukštis

2.4mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel STripFET™ V, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more