N-Channel MOSFET, 50 A, 100 V, 3-Pin DPAK STMicroelectronics STD40NF10

RS kodas: 165-6677Gamintojas: STMicroelectronicsGamintojo kodas: STD40NF10
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

DPAK (TO-252)

Serija

STripFET

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

28 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Ilgis

6.6mm

Typical Gate Charge @ Vgs

46.5 nC @ 10 V

Plotis

6.2mm

Number of Elements per Chip

1

Aukštis

2.4mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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€ 1 724,25

€ 0,69 Each (On a Reel of 2500) (be PVM)

€ 2 086,34

€ 0,835 Each (On a Reel of 2500) (su PVM)

N-Channel MOSFET, 50 A, 100 V, 3-Pin DPAK STMicroelectronics STD40NF10
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€ 1 724,25

€ 0,69 Each (On a Reel of 2500) (be PVM)

€ 2 086,34

€ 0,835 Each (On a Reel of 2500) (su PVM)

N-Channel MOSFET, 50 A, 100 V, 3-Pin DPAK STMicroelectronics STD40NF10
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

DPAK (TO-252)

Serija

STripFET

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

28 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Ilgis

6.6mm

Typical Gate Charge @ Vgs

46.5 nC @ 10 V

Plotis

6.2mm

Number of Elements per Chip

1

Aukštis

2.4mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more