N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK STMicroelectronics STB140NF75T4
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
75 V
Serija
STripFET F3
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
310 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
9.35mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Ilgis
10.4mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Aukštis
4.6mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
Malaysia
Produkto aprašymas
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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Patikrinkite dar kartą.
€ 1 805,00
€ 1,805 Each (On a Reel of 1000) (be PVM)
€ 2 184,05
€ 2,184 Each (On a Reel of 1000) (su PVM)
1000
€ 1 805,00
€ 1,805 Each (On a Reel of 1000) (be PVM)
€ 2 184,05
€ 2,184 Each (On a Reel of 1000) (su PVM)
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
75 V
Serija
STripFET F3
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
310 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
9.35mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Ilgis
10.4mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Aukštis
4.6mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
Malaysia
Produkto aprašymas
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products