SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 STMicroelectronics SCTW100N65G2AG
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
1200 V
Serija
SCT
Pakuotės tipas
H²PAK-7
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
7
Maximum Drain Source Resistance
0.105 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
5V
Number of Elements per Chip
1
Transistor Material
SiC
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€ 1 068,75
€ 35,625 Each (In a Tube of 30) (be PVM)
€ 1 293,19
€ 43,106 Each (In a Tube of 30) (su PVM)
30
€ 1 068,75
€ 35,625 Each (In a Tube of 30) (be PVM)
€ 1 293,19
€ 43,106 Each (In a Tube of 30) (su PVM)
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
1200 V
Serija
SCT
Pakuotės tipas
H²PAK-7
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
7
Maximum Drain Source Resistance
0.105 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
5V
Number of Elements per Chip
1
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products