N-Channel MOSFET, 1.5 A, 18 V, 3-Pin SOT-89 STMicroelectronics PD84001

RS kodas: 917-2738PGamintojas: STMicroelectronicsGamintojo kodas: PD84001
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

1.5 A

Maximum Drain Source Voltage

18 V

Pakuotės tipas

SOT-89

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Channel Mode

Enhancement

Maximum Power Dissipation

6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-0.5 V, +15 V

Transistor Material

Si

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

4.6mm

Plotis

2.6mm

Aukštis

1.6mm

Produkto aprašymas

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

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€ 29,00

€ 2,90 Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 35,09

€ 3,509 Už kiekviena vnt. (tiekiama riteje) (su PVM)

N-Channel MOSFET, 1.5 A, 18 V, 3-Pin SOT-89 STMicroelectronics PD84001
Pasirinkite pakuotės tipą
sticker-462

€ 29,00

€ 2,90 Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 35,09

€ 3,509 Už kiekviena vnt. (tiekiama riteje) (su PVM)

N-Channel MOSFET, 1.5 A, 18 V, 3-Pin SOT-89 STMicroelectronics PD84001

Sandėlio informacija laikinai nepasiekiama.

Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

kiekisVieneto kainaPer Ritė
10 - 20€ 2,90€ 14,50
25 - 95€ 2,75€ 13,75
100 - 495€ 2,20€ 11,00
500+€ 1,95€ 9,75

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

1.5 A

Maximum Drain Source Voltage

18 V

Pakuotės tipas

SOT-89

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Channel Mode

Enhancement

Maximum Power Dissipation

6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-0.5 V, +15 V

Transistor Material

Si

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

4.6mm

Plotis

2.6mm

Aukštis

1.6mm

Produkto aprašymas

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more