Techniniai dokumentai
Specifikacijos
Markė
SemikronMaximum Continuous Collector Current
430 A
Maximum Collector Emitter Voltage
1700 V
Maximum Gate Emitter Voltage
±20V
Pakuotės tipas
SEMITRANS3
Configuration
Dual Half Bridge
Tvirtinimo tipas
Panel Mount
Channel Type
N
Kaiščių skaičius
7
Transistor Configuration
Series
Matmenys
106.4 x 61.4 x 30mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 522,50
€ 522,50 už 1 vnt. (be PVM)
€ 632,22
€ 632,22 už 1 vnt. (su PVM)
1

€ 522,50
€ 522,50 už 1 vnt. (be PVM)
€ 632,22
€ 632,22 už 1 vnt. (su PVM)
1

Pirkti dideliais kiekiais
kiekis | Vieneto kaina |
---|---|
1 - 1 | € 522,50 |
2 - 4 | € 498,75 |
5 - 9 | € 479,75 |
10 - 19 | € 460,75 |
20+ | € 441,75 |
Techniniai dokumentai
Specifikacijos
Markė
SemikronMaximum Continuous Collector Current
430 A
Maximum Collector Emitter Voltage
1700 V
Maximum Gate Emitter Voltage
±20V
Pakuotės tipas
SEMITRANS3
Configuration
Dual Half Bridge
Tvirtinimo tipas
Panel Mount
Channel Type
N
Kaiščių skaičius
7
Transistor Configuration
Series
Matmenys
106.4 x 61.4 x 30mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.