Techniniai dokumentai
Specifikacijos
Markė
SemikronMaximum Continuous Collector Current
45 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
20V
Number of Transistors
6
Pakuotės tipas
SEMITOP3
Configuration
Hex
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
36
Transistor Configuration
Six Pack
Matmenys
55 x 31 x 12mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+150 °C
Kilmės šalis
Italy
Produkto aprašymas
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 78,75
už 1 vnt. (be PVM)
€ 95,29
už 1 vnt. (su PVM)
1
€ 78,75
už 1 vnt. (be PVM)
€ 95,29
už 1 vnt. (su PVM)
1
Pirkti dideliais kiekiais
kiekis | Vieneto kaina |
---|---|
1 - 1 | € 78,75 |
2 - 4 | € 71,92 |
5 - 9 | € 65,62 |
10+ | € 58,80 |
Techniniai dokumentai
Specifikacijos
Markė
SemikronMaximum Continuous Collector Current
45 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
20V
Number of Transistors
6
Pakuotės tipas
SEMITOP3
Configuration
Hex
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
36
Transistor Configuration
Six Pack
Matmenys
55 x 31 x 12mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+150 °C
Kilmės šalis
Italy
Produkto aprašymas
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.