Techniniai dokumentai
Specifikacijos
Markė
Renesas ElectronicsMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
178.5 W
Pakuotės tipas
TO-247A
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Switching Speed
1MHz
Transistor Configuration
Single
Matmenys
15.94 x 5.02 x 21.13mm
Gate Capacitance
1260pF
Maksimali darbinė temperatūra
+150 °C
Kilmės šalis
Japan
Produkto aprašymas
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 4,148
Each (In a Pack of 2) (be PVM)
€ 5,019
Each (In a Pack of 2) (su PVM)
2
€ 4,148
Each (In a Pack of 2) (be PVM)
€ 5,019
Each (In a Pack of 2) (su PVM)
2
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
2 - 4 | € 4,148 | € 8,30 |
6 - 10 | € 3,938 | € 7,88 |
12 - 48 | € 3,675 | € 7,35 |
50 - 98 | € 3,202 | € 6,40 |
100+ | € 3,045 | € 6,09 |
Techniniai dokumentai
Specifikacijos
Markė
Renesas ElectronicsMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
178.5 W
Pakuotės tipas
TO-247A
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Switching Speed
1MHz
Transistor Configuration
Single
Matmenys
15.94 x 5.02 x 21.13mm
Gate Capacitance
1260pF
Maksimali darbinė temperatūra
+150 °C
Kilmės šalis
Japan
Produkto aprašymas
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.