onsemi ISL9V3040D3ST IGBT, 21 A 300 V, 3-Pin DPAK (TO-252), Surface Mount
Techniniai dokumentai
Specifikacijos
Markė
onsemiMaximum Continuous Collector Current
21 A
Maximum Collector Emitter Voltage
300 V
Maximum Gate Emitter Voltage
±10V
Maximum Power Dissipation
150 W
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Channel Type
N
Kaiščių skaičius
3
Switching Speed
1MHz
Transistor Configuration
Single
Matmenys
6.73 x 6.22 x 2.39mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+175 °C
Produkto aprašymas
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Patikrinkite dar kartą.
€ 80,75
€ 1,615 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 97,71
€ 1,954 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
50
€ 80,75
€ 1,615 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 97,71
€ 1,954 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
50
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 50 - 95 | € 1,615 | € 8,08 |
| 100 - 495 | € 1,425 | € 7,12 |
| 500 - 995 | € 1,235 | € 6,18 |
| 1000+ | € 1,14 | € 5,70 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
onsemiMaximum Continuous Collector Current
21 A
Maximum Collector Emitter Voltage
300 V
Maximum Gate Emitter Voltage
±10V
Maximum Power Dissipation
150 W
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Channel Type
N
Kaiščių skaičius
3
Switching Speed
1MHz
Transistor Configuration
Single
Matmenys
6.73 x 6.22 x 2.39mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+175 °C
Produkto aprašymas
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products