N-Channel MOSFET, 220 mA, 50 V, 3-Pin SOT-23 onsemi BSS138

RS kodas: 671-0324PGamintojas: onsemiGamintojo kodas: BSS138
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

220 mA

Maximum Drain Source Voltage

50 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

3.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.92mm

Plotis

1.3mm

Transistor Material

Si

Typical Gate Charge @ Vgs

1.7 nC @ 10 V

Minimali darbinė temperatūra

-55 °C

Aukštis

0.93mm

Kilmės šalis

China

Produkto aprašymas

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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€ 0,21

Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 0,254

Už kiekviena vnt. (tiekiama riteje) (su PVM)

N-Channel MOSFET, 220 mA, 50 V, 3-Pin SOT-23 onsemi BSS138
Pasirinkite pakuotės tipą
sticker-462

€ 0,21

Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 0,254

Už kiekviena vnt. (tiekiama riteje) (su PVM)

N-Channel MOSFET, 220 mA, 50 V, 3-Pin SOT-23 onsemi BSS138
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
100 - 240€ 0,21€ 2,10
250 - 490€ 0,182€ 1,82
500 - 990€ 0,16€ 1,60
1000+€ 0,146€ 1,46

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

220 mA

Maximum Drain Source Voltage

50 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

3.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.92mm

Plotis

1.3mm

Transistor Material

Si

Typical Gate Charge @ Vgs

1.7 nC @ 10 V

Minimali darbinė temperatūra

-55 °C

Aukštis

0.93mm

Kilmės šalis

China

Produkto aprašymas

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more