Techniniai dokumentai
Specifikacijos
Markė
MicrochipChannel Type
N
Maximum Continuous Drain Current
1.1 A
Maximum Drain Source Voltage
250 V
Pakuotės tipas
DFN
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Depletion
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
5.1mm
Typical Gate Charge @ Vgs
7.04 nC @ 1.5 V
Plotis
5.1mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
0.85mm
Forward Diode Voltage
1.8V
Produkto aprašymas
DN2625 N-Channel MOSFET Transistors
The Microchip DN2625 is a low threshold depletion-mode (normally-on) MOSFET transistor utilizing an advanced vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.
MOSFET Transistors, Microchip
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Patikrinkite dar kartą.
€ 2,28
Each (In a Pack of 5) (be PVM)
€ 2,759
Each (In a Pack of 5) (su PVM)
Standartas
5
€ 2,28
Each (In a Pack of 5) (be PVM)
€ 2,759
Each (In a Pack of 5) (su PVM)
Standartas
5
Techniniai dokumentai
Specifikacijos
Markė
MicrochipChannel Type
N
Maximum Continuous Drain Current
1.1 A
Maximum Drain Source Voltage
250 V
Pakuotės tipas
DFN
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Depletion
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
5.1mm
Typical Gate Charge @ Vgs
7.04 nC @ 1.5 V
Plotis
5.1mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
0.85mm
Forward Diode Voltage
1.8V
Produkto aprašymas
DN2625 N-Channel MOSFET Transistors
The Microchip DN2625 is a low threshold depletion-mode (normally-on) MOSFET transistor utilizing an advanced vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.