N-Channel MOSFET, 66 A, 850 V, 3-Pin PLUS247 IXYS IXFX66N85X

RS kodas: 146-4245Gamintojas: IXYSGamintojo kodas: IXFX66N85X
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

IXYS

Channel Type

N

Maximum Continuous Drain Current

66 A

Maximum Drain Source Voltage

850 V

Serija

HiperFET

Pakuotės tipas

PLUS247

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

1.25 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Plotis

5.21mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

16.13mm

Typical Gate Charge @ Vgs

230 nC @ 10 V

Aukštis

21.34mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.4V

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€ 22,04

Each (In a Tube of 30) (be PVM)

€ 26,668

Each (In a Tube of 30) (su PVM)

N-Channel MOSFET, 66 A, 850 V, 3-Pin PLUS247 IXYS IXFX66N85X
sticker-462

€ 22,04

Each (In a Tube of 30) (be PVM)

€ 26,668

Each (In a Tube of 30) (su PVM)

N-Channel MOSFET, 66 A, 850 V, 3-Pin PLUS247 IXYS IXFX66N85X
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Vamzdelis
30 - 90€ 22,04€ 661,20
120 - 270€ 19,76€ 592,80
300 - 570€ 19,095€ 572,85
600 - 870€ 18,62€ 558,60
900+€ 18,145€ 544,35

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

IXYS

Channel Type

N

Maximum Continuous Drain Current

66 A

Maximum Drain Source Voltage

850 V

Serija

HiperFET

Pakuotės tipas

PLUS247

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

1.25 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Plotis

5.21mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

16.13mm

Typical Gate Charge @ Vgs

230 nC @ 10 V

Aukštis

21.34mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.4V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more