N-Channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC International Rectifier IRF7807ZPBF

RS kodas: 650-4097Gamintojas: International RectifierGamintojo kodas: IRF7807ZPBF
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

4mm

Typical Gate Charge @ Vgs

7.2 nC @ 4.5 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

5mm

Serija

HEXFET

Minimali darbinė temperatūra

-55 °C

Aukštis

1.5mm

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N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Vishay Si4134DY-T1-GE3
€ 0,783Each (In a Pack of 10) (be PVM)

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P.O.A.

N-Channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC International Rectifier IRF7807ZPBF
Pasirinkite pakuotės tipą
sticker-462

P.O.A.

N-Channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC International Rectifier IRF7807ZPBF
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Vishay Si4134DY-T1-GE3
€ 0,783Each (In a Pack of 10) (be PVM)

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

4mm

Typical Gate Charge @ Vgs

7.2 nC @ 4.5 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

5mm

Serija

HEXFET

Minimali darbinė temperatūra

-55 °C

Aukštis

1.5mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Vishay Si4134DY-T1-GE3
€ 0,783Each (In a Pack of 10) (be PVM)