Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
P
Maximum Continuous Drain Current
2.4 A
Maximum Drain Source Voltage
20 V
Pakuotės tipas
Micro6
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
375 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.7V
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Ilgis
3mm
Typical Gate Charge @ Vgs
5.8 nC @ 4.5 V
Plotis
1.75mm
Serija
HEXFET
Minimali darbinė temperatūra
-55 °C
Aukštis
1.3mm
Kilmės šalis
Thailand
Produkto aprašymas
P-Channel Power MOSFET 12V to 20V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 53,75
€ 0,215 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 65,04
€ 0,26 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
250

€ 53,75
€ 0,215 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 65,04
€ 0,26 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Gamybinė pakuotė (Ritė)
250

Sandėlio informacija laikinai nepasiekiama.
kiekis | Vieneto kaina | Per Ritė |
---|---|---|
250 - 450 | € 0,215 | € 10,75 |
500 - 1200 | € 0,194 | € 9,70 |
1250 - 2450 | € 0,175 | € 8,75 |
2500+ | € 0,165 | € 8,25 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
P
Maximum Continuous Drain Current
2.4 A
Maximum Drain Source Voltage
20 V
Pakuotės tipas
Micro6
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
375 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.7V
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Ilgis
3mm
Typical Gate Charge @ Vgs
5.8 nC @ 4.5 V
Plotis
1.75mm
Serija
HEXFET
Minimali darbinė temperatūra
-55 °C
Aukštis
1.3mm
Kilmės šalis
Thailand
Produkto aprašymas
P-Channel Power MOSFET 12V to 20V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.