Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SOT-23
Serija
HEXFET
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
540 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maksimali darbinė temperatūra
+150 °C
Typical Gate Charge @ Vgs
3.3 nC @ 10 V
Plotis
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
3.04mm
Aukštis
1.02mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Produkto aprašymas
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 13,96
€ 0,279 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 16,89
€ 0,338 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
50

€ 13,96
€ 0,279 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 16,89
€ 0,338 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
50

Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
kiekis | Vieneto kaina | Per Ritė |
---|---|---|
50 - 245 | € 0,279 | € 1,40 |
250 - 495 | € 0,217 | € 1,08 |
500 - 1245 | € 0,171 | € 0,86 |
1250+ | € 0,148 | € 0,74 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SOT-23
Serija
HEXFET
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
540 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maksimali darbinė temperatūra
+150 °C
Typical Gate Charge @ Vgs
3.3 nC @ 10 V
Plotis
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
3.04mm
Aukštis
1.02mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Produkto aprašymas
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.