Dual N-Channel MOSFET, 12 A, 20 V, 8-Pin SO-8 Infineon IRF9910TRPBF

RS kodas: 162-3269Gamintojas: InfineonGamintojo kodas: IRF9910TRPBF
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Techniniai dokumentai

Specifikacijos

Channel Mode

Enhancement

Channel Type

N

Number of Elements per Chip

2

Minimali darbinė temperatūra

-55 °C

Kaiščių skaičius

8

Forward Diode Voltage

1V

Tvirtinimo tipas

Surface Mount

Maximum Drain Source Voltage

20 V

Minimum Gate Threshold Voltage

1.65V

Maksimali darbinė temperatūra

+150 °C

Maximum Gate Threshold Voltage

2.55V

Maximum Gate Source Voltage

±20 V

Maximum Power Dissipation

2 W

Aukštis

1.5mm

Plotis

4mm

Ilgis

5mm

Maximum Continuous Drain Current

12 A

Pakuotės tipas

SO-8

Markė

Infineon

Serija

IRF9910

Maximum Drain Source Resistance

18.3 mΩ

Typical Gate Charge @ Vgs

15 nC @ 4.5 V

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€ 0,476

Each (On a Reel of 4000) (be PVM)

€ 0,576

Each (On a Reel of 4000) (su PVM)

Dual N-Channel MOSFET, 12 A, 20 V, 8-Pin SO-8 Infineon IRF9910TRPBF

4000

Galima įsigyti kartotiną kiekį 4000
4000€ 1 903,80
8000€ 3 807,60
12000€ 5 711,40
16000€ 7 615,20
20000€ 9 519,00
24000€ 11 422,80
28000€ 13 326,60
32000€ 15 230,40
36000€ 17 134,20
40000€ 19 038,00
44000€ 20 941,80
48000€ 22 845,60
52000€ 24 749,40
56000€ 26 653,20
60000€ 28 557,00

€ 0,476

Each (On a Reel of 4000) (be PVM)

€ 0,576

Each (On a Reel of 4000) (su PVM)

Dual N-Channel MOSFET, 12 A, 20 V, 8-Pin SO-8 Infineon IRF9910TRPBF
Sandėlio informacija laikinai nepasiekiama.

4000

Galima įsigyti kartotiną kiekį 4000
4000€ 1 903,80
8000€ 3 807,60
12000€ 5 711,40
16000€ 7 615,20
20000€ 9 519,00
24000€ 11 422,80
28000€ 13 326,60
32000€ 15 230,40
36000€ 17 134,20
40000€ 19 038,00
44000€ 20 941,80
48000€ 22 845,60
52000€ 24 749,40
56000€ 26 653,20
60000€ 28 557,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Mode

Enhancement

Channel Type

N

Number of Elements per Chip

2

Minimali darbinė temperatūra

-55 °C

Kaiščių skaičius

8

Forward Diode Voltage

1V

Tvirtinimo tipas

Surface Mount

Maximum Drain Source Voltage

20 V

Minimum Gate Threshold Voltage

1.65V

Maksimali darbinė temperatūra

+150 °C

Maximum Gate Threshold Voltage

2.55V

Maximum Gate Source Voltage

±20 V

Maximum Power Dissipation

2 W

Aukštis

1.5mm

Plotis

4mm

Ilgis

5mm

Maximum Continuous Drain Current

12 A

Pakuotės tipas

SO-8

Markė

Infineon

Serija

IRF9910

Maximum Drain Source Resistance

18.3 mΩ

Typical Gate Charge @ Vgs

15 nC @ 4.5 V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more