N-Channel MOSFET, 33 A, 100 V, 3-Pin TO-220AB Infineon IRF540NPBF

RS kodas: 914-8154Gamintojas: InfineonGamintojo kodas: IRF540NPBF
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Techniniai dokumentai

Specifikacijos

Number of Elements per Chip

1

Channel Mode

Enhancement

Channel Type

N

Transistor Material

Si

Kaiščių skaičius

3

Minimali darbinė temperatūra

-55 °C

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Configuration

Single

Tvirtinimo tipas

Through Hole

Minimum Gate Threshold Voltage

2V

Maksimali darbinė temperatūra

+175 °C

Maximum Drain Source Voltage

100 V

Maximum Gate Threshold Voltage

4V

Serija

HEXFET

Plotis

4.69mm

Pakuotės tipas

TO-220AB

Ilgis

10.54mm

Aukštis

8.77mm

Maximum Power Dissipation

130 W

Maximum Continuous Drain Current

33 A

Markė

Infineon

Maximum Drain Source Resistance

44 mΩ

Typical Gate Charge @ Vgs

71 nC @ 10 V

Kilmės šalis

China

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€ 0,845

Each (In a Pack of 20) (be PVM)

€ 1,022

Each (In a Pack of 20) (su PVM)

N-Channel MOSFET, 33 A, 100 V, 3-Pin TO-220AB Infineon IRF540NPBF
Pasirinkite pakuotės tipą

€ 0,845

Each (In a Pack of 20) (be PVM)

€ 1,022

Each (In a Pack of 20) (su PVM)

N-Channel MOSFET, 33 A, 100 V, 3-Pin TO-220AB Infineon IRF540NPBF
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
20 - 80€ 0,845€ 16,89
100 - 180€ 0,659€ 13,19
200 - 480€ 0,618€ 12,35
500 - 980€ 0,574€ 11,48
1000+€ 0,532€ 10,64

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Number of Elements per Chip

1

Channel Mode

Enhancement

Channel Type

N

Transistor Material

Si

Kaiščių skaičius

3

Minimali darbinė temperatūra

-55 °C

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Configuration

Single

Tvirtinimo tipas

Through Hole

Minimum Gate Threshold Voltage

2V

Maksimali darbinė temperatūra

+175 °C

Maximum Drain Source Voltage

100 V

Maximum Gate Threshold Voltage

4V

Serija

HEXFET

Plotis

4.69mm

Pakuotės tipas

TO-220AB

Ilgis

10.54mm

Aukštis

8.77mm

Maximum Power Dissipation

130 W

Maximum Continuous Drain Current

33 A

Markė

Infineon

Maximum Drain Source Resistance

44 mΩ

Typical Gate Charge @ Vgs

71 nC @ 10 V

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more