Infineon CoolMOS™ CE N-Channel MOSFET, 14.1 A, 550 V, 3-Pin DPAK IPD50R380CEAUMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
14.1 A
Maximum Drain Source Voltage
550 V
Pakuotės tipas
DPAK (TO-252)
Serija
CoolMOS™ CE
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
98 W
Maximum Gate Source Voltage
-30 V, +30 V
Ilgis
6.73mm
Typical Gate Charge @ Vgs
24.8 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Plotis
6.22mm
Number of Elements per Chip
1
Aukštis
2.41mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
0.85V
Produkto aprašymas
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 8,35
€ 0,835 Each (In a Pack of 10) (be PVM)
€ 10,10
€ 1,01 Each (In a Pack of 10) (su PVM)
Standartas
10
€ 8,35
€ 0,835 Each (In a Pack of 10) (be PVM)
€ 10,10
€ 1,01 Each (In a Pack of 10) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
10
Sandėlio informacija laikinai nepasiekiama.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 10 - 40 | € 0,835 | € 8,35 |
| 50 - 490 | € 0,795 | € 7,95 |
| 500 - 990 | € 0,574 | € 5,74 |
| 1000 - 2490 | € 0,476 | € 4,76 |
| 2500+ | € 0,464 | € 4,64 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
14.1 A
Maximum Drain Source Voltage
550 V
Pakuotės tipas
DPAK (TO-252)
Serija
CoolMOS™ CE
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
98 W
Maximum Gate Source Voltage
-30 V, +30 V
Ilgis
6.73mm
Typical Gate Charge @ Vgs
24.8 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Plotis
6.22mm
Number of Elements per Chip
1
Aukštis
2.41mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
0.85V
Produkto aprašymas
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products