N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK Infineon IPB64N25S320ATMA1

RS kodas: 171-1959Gamintojas: InfineonGamintojo kodas: IPB64N25S320ATMA1
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

64 A

Maximum Drain Source Voltage

250 V

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Plotis

10.25mm

Maksimali darbinė temperatūra

+175 °C

Ilgis

10mm

Typical Gate Charge @ Vgs

67 nC @ 10 V

Serija

IPB64N25S3-20

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

4.4mm

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€ 6,72

Each (In a Pack of 5) (be PVM)

€ 8,131

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK Infineon IPB64N25S320ATMA1
Pasirinkite pakuotės tipą
sticker-462

€ 6,72

Each (In a Pack of 5) (be PVM)

€ 8,131

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK Infineon IPB64N25S320ATMA1
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
5 - 5€ 6,72€ 33,60
10 - 20€ 5,67€ 28,35
25 - 45€ 5,355€ 26,78
50 - 120€ 4,935€ 24,68
125+€ 4,62€ 23,10

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

64 A

Maximum Drain Source Voltage

250 V

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Plotis

10.25mm

Maksimali darbinė temperatūra

+175 °C

Ilgis

10mm

Typical Gate Charge @ Vgs

67 nC @ 10 V

Serija

IPB64N25S3-20

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

4.4mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more