3 SiC N-Channel MOSFET, 25 A, 1200 V, 23-Pin AG-EASY1B Infineon DF11MR12W1M1HFB67BPSA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
1200 V
Pakuotės tipas
AG-EASY1B
Serija
EasyPACK
Kaiščių skaičius
23
Channel Mode
Enhancement
Number of Elements per Chip
3
Transistor Material
SiC
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P.O.A.
3 SiC N-Channel MOSFET, 25 A, 1200 V, 23-Pin AG-EASY1B Infineon DF11MR12W1M1HFB67BPSA1
1
P.O.A.
3 SiC N-Channel MOSFET, 25 A, 1200 V, 23-Pin AG-EASY1B Infineon DF11MR12W1M1HFB67BPSA1
Sandėlio informacija laikinai nepasiekiama.
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
1200 V
Pakuotės tipas
AG-EASY1B
Serija
EasyPACK
Kaiščių skaičius
23
Channel Mode
Enhancement
Number of Elements per Chip
3
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products