Techniniai dokumentai
Specifikacijos
Markė
InfineonOutput Current
420 mA
Supply Voltage
17.5V
Kaiščių skaičius
28
Pakuotės tipas
DSO
Fall Time
45ns
Number of Outputs
6
Rise Time
100ns
Topology
Galvanic Isolated
High and Low Sides Dependency
Independent
Time Delay
800ns
Number of Drivers
6
Bridge Type
Full Bridge
Polarity
Non-Inverting
Tvirtinimo tipas
Surface Mount
Kilmės šalis
Malaysia
Produkto aprašymas
EiceDRIVER 3-Phase Gate Drive IC, Infineon
3-phase 600V MOSFET and IGBT gate driver ICs from Infineon based on proven existing SOI-technology. The absence of parasitic thyristor structures in these rugged devices prevents latch-up under all normal operating conditions. The drivers include under-voltage over-current detection and can be controlled by CMOS or LSTTL compatible signals down to 3.3V.
MOSFET & IGBT Drivers, Infineon (International Rectifier)
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 1,758
Each (On a Reel of 1000) (be PVM)
€ 2,127
Each (On a Reel of 1000) (su PVM)
1000
€ 1,758
Each (On a Reel of 1000) (be PVM)
€ 2,127
Each (On a Reel of 1000) (su PVM)
1000
Techniniai dokumentai
Specifikacijos
Markė
InfineonOutput Current
420 mA
Supply Voltage
17.5V
Kaiščių skaičius
28
Pakuotės tipas
DSO
Fall Time
45ns
Number of Outputs
6
Rise Time
100ns
Topology
Galvanic Isolated
High and Low Sides Dependency
Independent
Time Delay
800ns
Number of Drivers
6
Bridge Type
Full Bridge
Polarity
Non-Inverting
Tvirtinimo tipas
Surface Mount
Kilmės šalis
Malaysia
Produkto aprašymas
EiceDRIVER 3-Phase Gate Drive IC, Infineon
3-phase 600V MOSFET and IGBT gate driver ICs from Infineon based on proven existing SOI-technology. The absence of parasitic thyristor structures in these rugged devices prevents latch-up under all normal operating conditions. The drivers include under-voltage over-current detection and can be controlled by CMOS or LSTTL compatible signals down to 3.3V.