BALLUFF Inductive Barrel-Style Proximity Sensor, M8 x 1, 1.5 mm Detection, PNP Output, 12 → 30 V dc, IP67
Techniniai dokumentai
Specifikacijos
Body Style
Barrel
Reverse Polarity Protection
Yes
Short Circuit Overload Protection
Yes
For Use With HMI
X2
Shielding
Shielded
Maximum Switching Frequency
1kHz
Thread Size
M8 x 1
Maximum dc Voltage
30V
Minimali darbinė temperatūra
-25°C
Maksimali darbinė temperatūra
+70°C
IP Rating
IP67
Tvirtinimo tipas
Flush
Housing Material
CuZn
Switching Current
200 mA
Detection Range
1.5 mm
Markė
BALLUFFOutput Type
PNP
Terminal Type
3-Pin M8 Connector
Ilgis
60mm
Supply Voltage
12 → 30 V dc
Kilmės šalis
Hungary
Produkto aprašymas
Co-Pack IGBT up to 20A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
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Patikrinkite dar kartą.
€ 47,84
už 1 vnt. (be PVM)
€ 57,89
už 1 vnt. (su PVM)
1
€ 47,84
už 1 vnt. (be PVM)
€ 57,89
už 1 vnt. (su PVM)
1
Techniniai dokumentai
Specifikacijos
Body Style
Barrel
Reverse Polarity Protection
Yes
Short Circuit Overload Protection
Yes
For Use With HMI
X2
Shielding
Shielded
Maximum Switching Frequency
1kHz
Thread Size
M8 x 1
Maximum dc Voltage
30V
Minimali darbinė temperatūra
-25°C
Maksimali darbinė temperatūra
+70°C
IP Rating
IP67
Tvirtinimo tipas
Flush
Housing Material
CuZn
Switching Current
200 mA
Detection Range
1.5 mm
Markė
BALLUFFOutput Type
PNP
Terminal Type
3-Pin M8 Connector
Ilgis
60mm
Supply Voltage
12 → 30 V dc
Kilmės šalis
Hungary
Produkto aprašymas
Co-Pack IGBT up to 20A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.