ON Semiconductor MOSFETs

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Išsami informacija Markė Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Dimensions Typical Turn-Off Delay Time Series Typical Turn-On Delay Time Forward Transconductance Width Height Length Forward Diode Voltage Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material Automotive Standard
FCU360N65S3R0 N-Channel MOSFET, 10 A, 650 V, 3-Pin IPAK ON Semiconductor ON Semiconductor N 10 A 650 V 360 mΩ 4.5V 2.5V ±30 V IPAK Through Hole 3 Single Enhancement Power MOSFET 83 W 730 pF @ 400 V 18 nC @ 10 V 6.8 x 2.5 x 6.3mm 34 ns - 12 ns 6s 2.5mm 6.3mm 6.8mm 1.2V +150 °C 1 -55 °C - -
NTHL065N65S3F N-Channel MOSFET, 46 A, 650 V, 3-Pin TO-247 ON Semiconductor ON Semiconductor N 46 A 650 V 65 mΩ 5V 3V ±30 V TO-247 Through Hole 3 Single Enhancement Power MOSFET 337 W 4075 pF @ 400 V 98 nC @ 10 V 15.87 x 4.82 x 20.82mm 78 ns - 34 ns 31s 4.82mm 20.82mm 15.87mm 1.3V +150 °C 1 -55 °C - -
NTHL110N65S3F N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 ON Semiconductor ON Semiconductor N 30 A 650 V 110 mΩ 5V 3V ±30 V TO-247 Through Hole 3 Single Enhancement Power MOSFET 240 W 2560 pF @ 400 V 58 nC @ 10 V 15.87 x 4.82 x 20.82mm 61 ns - 29 ns 17s 4.82mm 20.82mm 15.87mm 1.3V +150 °C 1 -55 °C - -
FCP165N65S3 N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220 ON Semiconductor ON Semiconductor N 19 A 650 V 165 mΩ 4.5V 2.5V ±30 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 154 W 1500 pF @ 400 V 39 nC @ 10 V 10.67 x 4.7 x 16.3mm 53 ns - 21 ns 12s 4.7mm 16.3mm 10.67mm 1.2V +150 °C 1 -55 °C - -
FCH125N65S3R0-F155 N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 ON Semiconductor ON Semiconductor N 24 A 650 V 125 mΩ 4.5V 2.5V ±30 V TO-247 Through Hole 3 Single Enhancement Power MOSFET 181 W 1940 pF @ 400 V 46 nC @ 10 V 15.87 x 4.82 x 20.82mm 48 ns - 21 ns 16s 4.82mm 20.82mm 15.87mm 1.2V +150 °C 1 -55 °C - -
FCP125N65S3R0 N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-220 ON Semiconductor ON Semiconductor N 24 A 650 V 125 mΩ 4.5V 2.5V ±30 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 181 W 1940 pF @ 400 V 46 nC @ 10 V 10.67 x 4.7 x 16.3mm 48 ns - 21 ns 16s 4.7mm 16.3mm 10.67mm 1.2V +150 °C 1 -55 °C - -
FCPF165N65S3R0L N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220F ON Semiconductor ON Semiconductor N 19 A 650 V 165 mΩ 4.5V 2.5V ±30 V TO-220F Through Hole 3 Single Enhancement Power MOSFET 35 W 1415 pF @ 400 V 35 nC @ 10 V 10.3 x 4.6 x 15.7mm 43 ns - 17 ns 12s 4.6mm 15.7mm 10.3mm 1.2V +150 °C 1 -55 °C - -
FCPF190N65S3R0L N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-220F ON Semiconductor ON Semiconductor N 17 A 650 V 190 mΩ 4.5V 2.5V ±30 V TO-220F Through Hole 3 Single Enhancement Power MOSFET 33 W 1350 pF @ 400 V 33 nC @ 10 V 10.3 x 4.6 x 15.7mm 42 ns - 17 ns 10s 4.6mm 15.7mm 10.3mm 1.2V +150 °C 1 -55 °C - -
FCU600N65S3R0 N-Channel MOSFET, 6 A, 650 V, 3-Pin IPAK ON Semiconductor ON Semiconductor N 6 A 650 V 600 mΩ 4.5V 2.5V ±30 V IPAK Through Hole 3 Single Enhancement Power MOSFET 54 W 465 pF @ 400 V 11 nC @ 10 V 6.8 x 2.5 x 6.3mm 29 ns - 11 ns 3.6s 2.5mm 6.3mm 6.8mm 1.2V +150 °C 1 -55 °C - -
FET 100V 4.2 MOHM PQFN56 ON Semiconductor N 124 A 100 V 12 mΩ 4V 2V ±20 V PQFN Surface Mount 8 Single Enhancement Power MOSFET 125 W 2945 pF @ 50 V 42 nC @ 10 V 5.85 x 5 x 1.05mm 25 ns - 17 ns 116S 5mm 1.05mm 5.85mm 1.3V +150 °C 1 -55 °C - -
FET 100V 4.2 MOHM PQFN56 ON Semiconductor N 124 A 100 V 12 mΩ 4V 2V ±20 V PQFN Surface Mount 8 Single Enhancement Power MOSFET 125 W 2945 pF @ 50 V 42 nC @ 10 V 5.85 x 5 x 1.05mm 25 ns - 17 ns 116S 5mm 1.05mm 5.85mm 1.3V +150 °C 1 -55 °C - -
FET 100V 4.5 MOHM ON Semiconductor N 128 A 100 V 4.5 mΩ 4V 2V ±20 V TO-220F Through Hole 3 Single Enhancement Power MOSFET 37.5 W 3615 pF @ 50 V 48 nC @ 10 V 10.36 x 4.9 x 16.07mm 41 ns - 29 ns 134S 4.9mm 16.07mm 10.36mm 1.3V +175 °C 1 -55 °C - -
FET 100V 4.5 MOHM ON Semiconductor N 128 A 100 V 4.5 mΩ 4V 2V ±20 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 150 W 3615 pF @ 50 V 48 nC @ 10 V 10.36 x 4.67 x 15.21mm 41 ns - 29 ns 134S 4.67mm 15.21mm 10.36mm 1.3V +175 °C 1 -55 °C - -
FET 100V 4.5 MOHM ON Semiconductor N 128 A 100 V 4.5 mΩ 4V 2V ±20 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 150 W 3615 pF @ 50 V 48 nC @ 10 V 10.36 x 4.67 x 15.21mm 41 ns - 29 ns 134S 4.67mm 15.21mm 10.36mm 1.3V +175 °C 1 -55 °C - -
FET 100V 4.5 MOHM ON Semiconductor N 128 A 100 V 4.5 mΩ 4V 2V ±20 V TO-220F Through Hole 3 Single Enhancement Power MOSFET 37.5 W 3615 pF @ 50 V 48 nC @ 10 V 10.36 x 4.9 x 16.07mm 41 ns - 29 ns 134S 4.9mm 16.07mm 10.36mm 1.3V +175 °C 1 -55 °C - -
FET 100V 8.5 MOHM ON Semiconductor N 76 A 100 V 8.5 mΩ 4V 2V ±20 V TO-220F Through Hole 3 Single Enhancement Power MOSFET 35 W 1765 pF @ 50 V 25 nC @ 10 V 10.36 x 4.9 x 16.07mm 18 ns - 12 ns 68s 4.9mm 16.07mm 10.36mm 1.3V +175 °C 1 -55 °C - -
FET 100V 8.5 MOHM ON Semiconductor N 76 A 100 V 8.5 mΩ 4V 2V ±20 V TO-220F Through Hole 3 Single Enhancement Power MOSFET 35 W 1765 pF @ 50 V 25 nC @ 10 V 10.36 x 4.9 x 16.07mm 18 ns - 12 ns 68s 4.9mm 16.07mm 10.36mm 1.3V +175 °C 1 -55 °C - -
FET 100V 8.5 MOHM ON Semiconductor N 76 A 100 V 8.5 mΩ 4V 2V ±20 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 107 W 1765 pF @ 50 V 25 nC @ 10 V 10.36 x 4.67 x 15.21mm 18 ns - 12 ns 68s 4.67mm 15.21mm 10.36mm 1.3V +175 °C 1 -55 °C - -
FET 100V 8.5 MOHM ON Semiconductor N 76 A 100 V 8.5 mΩ 4V 2V ±20 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 107 W 1765 pF @ 50 V 25 nC @ 10 V 10.36 x 4.67 x 15.21mm 18 ns - 12 ns 68s 4.67mm 15.21mm 10.36mm 1.3V +175 °C 1 -55 °C - -
MOSFET Dual N-Channel 60V 295mA ESD SC88 ON Semiconductor - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
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